v6wm100c-m3 www.vishay.com vishay general semiconductor revision: 04-dec-13 1 document number: 89969 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual trench mos barrier schottky rectifier ultra low v f = 0.56 v at i f = 3 a features ? trench mos schottky technology ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reverse battery protection. mechanical data case: to-252 (d-pak) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked primary characteristics i f(av) 2 x 3 a v rrm 100 v i fsm 75 a v f at i f = 3 a (t a = 125 c) 0.56 v t j max. 150 c package to-252 (d-pak) diode variation dual common cathode to-252 (d-pak) a k heatsink a v6wm100c a a k tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v6wm100c unit maximum repetitive pe ak reverse voltage v rrm 100 v maximum average forward rectified current ? (fig. 1) per device i f(av) 6 a per diode 3 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 75 a operating junction and storage temperature range t j , t stg -40 to +150 c
v6wm100c-m3 www.vishay.com vishay general semiconductor revision: 04-dec-13 2 document number: 89969 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 5 ms notes (1) the heat generated must be less than the thermal conductivity from junction-to-ambient: dp d /dt j < 1/r ? ja (2) free air, without heatsink ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 3 a t a = 25 c v f (1) 0.65 0.74 v t a = 125 c 0.56 0.65 reverse current per diode v r = 100 v t a = 25 c i r (2) - 150 a t a = 125 c 2 6 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v6wm100c unit typical thermal resistance per diode r ? jc 3.8 c/w per device 1.9 per device r ? ja (1) (2) 65 ordering information (example) preferred p/n unit weight (g) package code base quantity delivery mode v6wm100c-m3/i 0.38 i 2500/reel 13" di ameter plastic tape and reel 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 average forward rectified current (a) ca s e temperature ( c) rth ja =rth jc =1.9 o c/w rth ja =65 o c/w 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 average power lo ss (w) average forward current (a) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 d = 0.8 d = t p /t t t p
v6wm100c-m3 www.vishay.com vishay general semiconductor revision: 04-dec-13 3 document number: 89969 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per device 0.1 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 0.0001 0.001 0.01 0.1 1 10 100 20 30 40 50 60 70 80 90 100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t a = 150 c t a = 125 c t a = 100 c t a = 25 c 10 100 1000 10 000 0.1 1 10 100 junction capacitance (pf) rever s e voltage (v) t j = 25 c f = 1.0 mhz v s i g = 50 mv p - p 0.1 1 10 0.01 0.1 1 10 100 tran s ient thermal impedance ( c/w) t - pul s e duration ( s ) junction to ca s e
v6wm100c-m3 www.vishay.com vishay general semiconductor revision: 04-dec-13 4 document number: 89969 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) note ? conforms to jedec to-252 vari ation aa except dimension d symbol inches millimeters min. max. min. max. a 0.086 0.094 2.19 2.38 a1 - 0.005 - 0.13 b 0.025 0.035 0.64 0.89 b2 0.033 0.045 0.84 1.14 b3 0.205 0.215 5.21 5.46 c 0.018 0.024 0.46 0.61 d 0.235 0.250 5.97 6.22 d1 0.205 - 5.21 - e 0.250 0.265 6.35 6.73 e1 0.190 - 4.83 - e 0.090 bsc. 2.29 bsc. h 0.380 0.410 9.65 10.41 l 0.055 0.070 1.40 1.78 l2 0.020 bsc. 0.51 bsc. l3 0.035 0.050 0.89 1.27 l4 0.025 0.039 0.64 1.01 ? 0 8 0 8 d l3 l4 b3 b2 b 1.55 mm ref. e to-252 (d-pak) a c h a1 c e s ee detail a - a - 0.002 0.05 mm " e1 d1 l2 l 0.004 0.1 mm " mountin g pad layout in inche s (millimeter s ) 0.244 (6.2) min. 0.256 (6.5) min. 0.094 (2.4) min. 0.051 (1.3) min. 0.39 (9.9) 0.488 (12.4) 0.086 (2.19) 0.094 (2.39)
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